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參數資料
| 型號： | 61SP6464 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM |
| 中文描述： | 64K的× 64 SYNCHRONOU擰管道靜態RAM |
| 文件頁數： | 6/19頁 |
| 文件大小： | 130K |
| 代理商： | 61SP6464 |
IS61SP6464
ISSI
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
01/14/04
LINEAR BURST ADDRESS TABLE
(MODE = GND
Q
)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to GND for I/O Pins
V
IN
Voltage Relative to GND for
for Address and Control Inputs
V
DD
Voltage on V
DD
Supply Relative to GND
Parameter
Power Dissipation
Output Current (per I/O)
Value
1.0
100
Unit
W
mA
V
V
–0.5 to V
DDQ
+ 0.3
–0.5 to 5.5
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage
higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE
Range
Commercial
Ambient Temperature
0°C to +70°C
V
DD
3.3V +10%, –5%
Industrial
–40°C to +85°C
3.3V +10%, –5%
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