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| 型號： | 61SP6464 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM |
| 中文描述： | 64K的× 64 SYNCHRONOU擰管道靜態(tài)RAM |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 130K |
| 代理商： | 61SP6464 |
IS61SP6464
ISSI
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
01/14/04
POWER SUPPLY CHARACTERISTICS
(Over Operating Range)
-117
Max.
-100
Max.
Symbol
Parameter
Test Conditions
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
All Inputs = V
IL
or V
IH
OE
= V
IH
,
Cycle Time
≥
t
KC
min.
Device Deselected,
V
DD
= Max.,
All Inputs = V
IH
or V
IL
CLK Cycle Time
≥
t
KC
min.
Com.
Ind.
270
250
270
mA
I
SB
1
Standby Current
TTL Inputs
Com.
Ind.
70
70
80
mA
I
SB
2
Standby Current
CMOS Inputs
Device Deselected,
V
DD
= Max.,
V
IN
≥
V
DD
–
0.2V, or V
IN
≤
0.2V
CLK Cycle Time
≥
t
KC
min.
Com.
Ind.
20
20
30
mA
I
ZZ
Power-Down Mode
Current
ZZ = V
DDQ
, CLK Running
All Inputs
≤
GND + 0.2V
or
≥
V
DD
– 0.2V
Com.
Ind.
20
20
30
mA
Notes:
1. The MODE pin has an internal pullup. ZZ pin has an internal pull-down. This pin may be a No Connect, tied to GND, or tied to
V
DDQ
.
2. The MODE pin should be tied to V
DD
or GND. It exhibits ±10 μA maximum leakage current when tied to
≤
GND + 0.2V
or
≥
V
DD
– 0.2V.
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