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參數資料
| 型號： | 62LV1024SC |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 元件分類： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的128K的× 8位 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 383K |
| 代理商： | 62LV1024SC |
Revision 2.2
April 2001
1
R0201-BS62LV1024
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
Wide Vcc operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE2, CE1, and OE options
PRODUCT FAMILY
FEATURES
The BS62LV1024 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.02uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1024 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1024 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4mm
STSOP and 8mmx20mm TSOP.
DESCRIPTION
BLOCK DIAGRAM
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
.
reserves the right to modify document contents without notice.
BS62LV1024
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
BS62LV1024TC
BS62LV1024STC
BS62LV1024TI
BS62LV1024STI
BS62LV1024SC
BS62LV1024SI
BS62LV1024PC
BS62LV1024PI
BS62LV1024JC
BS62LV1024JI
A7
A12
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 1024
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Output
Buffer
Address Input Buffer
A3 A2 A1 A0 A10
Data
Input
Buffer
Control
Gnd
Vdd
OE
WE
CE1
DQ5
DQ6
DQ4
A14
A16
A15
A8
A9
A11
A13
8
8
8
8
DQ7
DQ3
DQ2
DQ1
DQ0
A6
14
128
1024
1024
20
A4
A5
CE2
BSI
PO W ER DISSIPATIO N
Standby
(
IccSB1, M ax)
Vcc=5V
Vcc=3V
SPEED
(ns)
O perating
(Icc, M ax)
Vcc=5V
PRO DUCT
FAM ILY
O PERATING
TEM PERATURE
Vcc
RANG E
Vcc=3V
Vcc=3V
PKG TYPE
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
BS62LV
P-32
O P-32
SO P-32
IP-32
J-32
SO
CE
DI
P-32
SO
O P-32
TS
SO P-32
ST
IP-32
PD
J-32
SO
CE
DI
1024SC
1024TC
1024STC
1024PC
1024JC
1024DC
1024SI
1024TI
1024STI
1024PI
1024JI
1024DI
SO
TS
ST
PD
+0
O
C to +70
O
C
2.4V ~ 5.5V
70
3.0uA
1.0uA
35m A
20m A
-40
O
C to +85
O
C
2.4V ~ 5.5V
70
5.0uA
1.5uA
40m A
25m A
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