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參數(shù)資料
| 型號(hào)： | FM20L08 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1Mbit Bytewide FRAM Memory ? Extended Temp |
| 中文描述： | 為1Mbit FRAM存儲(chǔ)器Bytewide？擴(kuò)展級(jí)溫度 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大小： | 153K |
| 代理商： | FM20L08 |
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Preliminary
FM20L08
1Mbit Bytewide FRAM Memory – Extended Temp.
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.4
Oct. 2005
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Page 1 of 14
Features
1Mbit Ferroelectric Nonvolatile RAM
Organized as 128Kx8
Unlimited Read/Write Cycles
NoDelay Writes
Page Mode Operation to 33MHz
Advanced High-Reliability Ferroelectric Process
SRAM Replacement
JEDEC 128Kx8 SRAM pinout
60 ns Access Time, 350 ns Cycle Time
System Supervisor
Low Voltage monitor drives external /LVL signal
Write protects memory for low voltage condition
Software programmable block write protect
Description
The FM20L08 is a 128K x 8 nonvolatile memory that
reads and writes like a standard SRAM. A
ferroelectric random access memory or FRAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and unlimited write endurance make
FRAM superior to other types of memory.
In-system operation of the FM20L08 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The FRAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM20L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM20L08 includes a voltage monitor function
that monitors the power supply voltage. It asserts an
active-low signal that indicates the memory is write-
protected when V
DD
drops below a critical threshold.
When the /LVL signal is low, the memory is
protected against an inadvertent access and data
corruption.
Superior to Battery-backed SRAM Modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low Power Operation
3.3V +10%, -5% Power Supply
22 mA Active Current
Industry Standard Configurations
Extended Temperature -25
°
C to +85
°
C
32-pin “green” TSOP (-TG)
The FM20L08 also features software-controlled write
protection. The memory array is divided into 8
uniform blocks, each of which can be individually
write protected.
Device specifications are guaranteed over the
temperature range -25°C to +85°C.
and
system
design
Pin Configuration
Ordering Information
60 ns access, 32-pin
“Green” TSOP
FM20L08-60-TG
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
WE
DNU
A15
VDD
LVL
A16
A14
A12
A7
A6
A5
A4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
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| FM20L08-60-TG | 1Mbit Bytewide FRAM Memory ? Extended Temp |
| FM20P5X | Ultra-Low-Power Analog Temperature Sensor |
| FM20S3X | Ultra-Low-Power Analog Temperature Sensor |
| FM20 | Ultra-Low-Power Analog Temperature Sensor |
| FM230-C | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM20L08_07 | 制造商:RAMTRON 制造商全稱(chēng):RAMTRON 功能描述:1Mbit Bytewide FRAM Memory - Industrial Temp. |
| FM20L08-55-T | 制造商:Ramtron International Corporation 功能描述:128Kx8, 3V |
| FM20L08-60-TG | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TG1 | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TG1TR | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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