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參數資料
| 型號： | FM20L08 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1Mbit Bytewide FRAM Memory ? Extended Temp |
| 中文描述： | 為1Mbit FRAM存儲器Bytewide？擴展級溫度 |
| 文件頁數： | 8/14頁 |
| 文件大小： | 153K |
| 代理商： | FM20L08 |
FM20L08 - Extended Temp.
Rev. 1.4
Oct. 2005
Page 8 of 14
Electrical Specifications
Absolute Maximum Ratings
Symbol
V
DD
V
IN
Description
Power Supply Voltage with respect to V
SS
Voltage on any signal pin with respect to V
SS
Ratings
-1.0V to +5.0V
-1.0V to +5.0V and
V
IN
< V
DD
+1V
-55
°
C to +125
°
C
300
°
C
T
STG
T
LEAD
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these or any other conditions above those listed in the
operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for
extended periods may affect device reliability.
DC Operating Conditions
(T
A
= -25
°
C to +85
°
C, V
DD
= 3.3V +10%, -5% unless otherwise specified)
Symbol Parameter
V
DD
Power Supply
I
DD
V
DD
Supply Current
I
SB
Standby Current – CMOS
V
TP
V
DD
trip point to assert (deassert) /LVL
I
LI
Input Leakage Current
I
LO
Output Leakage Current
V
IH
Input High Voltage
V
IL
Input Low Voltage
V
OH
Output High Voltage (
I
OH
= -1.0 mA)
V
OL
Output Low Voltage (
I
OL
= 2.1 mA)
Notes
1.
V
DD
= 3.6V, /CE cycling at minimum cycle time. All inputs at CMOS levels (0.2V or V
DD
-0.2V), all DQ pins unloaded.
2.
V
DD
= 3.6V, /CE at V
DD
, All other pins at CMOS levels (0.2V or V
DD
-0.2V).
3.
This is the V
DD
trip voltage at which /LVL is asserted or deasserted. When V
DD
rises above V
TP
, /LVL will be deasserted
after satisfying t
PULV
. When V
DD
drops below V
TP
, /LVL will be asserted after satisfying t
PDLV
.
4.
V
IN
, V
OUT
between V
DD
and V
SS
.
5.
For the /LVL pin, the test condition is I
OL
= 80
μ
A when V
DD
is between 3.135V and 1.2V. The state of the /LVL pin is not
guaranteed when V
DD
is below 1.2V.
Min
3.135
2.7
2.2
-0.3
2.4
-
Typ
3.3
-
-
-
Max
3.63
22
20
3.0
±
1
±
1
V
DD
+ 0.3
0.6
-
0.4
Units
V
mA
μ
A
V
μ
A
μ
A
V
V
V
V
Notes
1
2
3
4
4
5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FM20L08_07 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:1Mbit Bytewide FRAM Memory - Industrial Temp. |
| FM20L08-55-T | 制造商:Ramtron International Corporation 功能描述:128Kx8, 3V |
| FM20L08-60-TG | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TG1 | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TG1TR | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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