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參數資料
| 型號： | FM24C04A-S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 4Kb FRAM Serial 3V Memory |
| 中文描述： | 4Kb的鐵電串行3V的記憶 |
| 文件頁數： | 8/12頁 |
| 文件大小： | 110K |
| 代理商： | FM24C04A-S |
FM24C04A
Applications
The versatility of FRAM technology fits into many
diverse applications. Clearly the strength of higher
write endurance and faster writes make FRAM
superior
to
EEPROM
programmable applications. The advantage is most
obvious in data collection environments where writes
are frequent and data must be nonvolatile.
The attributes of fast writes and high write endurance
combine in many innovative ways. A short list of
ideas is provided here.
1.
Data collection. In applications where data is
collected and saved, FRAM provides a superior
alternative to other solutions. It is more cost effective
than battery backup for SRAM and provides better
write attributes than EEPROM.
2.
Configuration. Any nonvolatile memory can
retain a configuration. However if the configuration
changes and power failure is a possibility, the higher
write endurance of FRAM allows changes to be
recorded without restriction. Any time the system
state is altered, the change can be written. This avoids
writing to memory on power down when the available
time is short and power scarce.
3.
High noise environments. Writing to EEPROM
in a noisy environment can be challenging. When
severe noise or power fluctuations are present, the
long write time of EEPROM creates a window of
vulnerability during which the write can be corrupted.
The fast write of FRAM is completed within a
microsecond. This time is typically too short for noise
or power fluctuation to disturb it.
Rev. 2.0
July 2003
8 of 12
in
all
but
one-time
4.
Time to market. In a complex system, multiple
software routines may need to access the nonvolatile
memory. In this environment the time delay
associated with programming EEPROM adds undue
complexity to the software development. Each
software routine must wait for complete programming
before allowing access to the next routine. When time
to market is critical, FRAM can eliminate this simple
obstacle. As soon as a write is issued to the
FM24C04A, it is effectively done -- no waiting.
5.
RF/ID. In the area of contactless memory, FRAM
provides an ideal solution. Since RF/ID memory is
powered by an RF field, the long programming time
and high current consumption needed to write
EEPROM is unattractive. FRAM provides a superior
solution. The FM24C04A is suitable for multi-chip
RF/ID products.
6.
Maintenance tracking. In sophisticated systems,
the operating history and system state during a failure
is important knowledge. Maintenance can be
expedited when this information has been recorded.
Due to the high write endurance, FRAM makes an
ideal system log. In addition, the convenient 2-wire
interface of the FM24C04A allows memory to be
distributed throughout the system using minimal
additional resources.
相關PDF資料 |
PDF描述 |
|---|---|
| FM24C05ULZ | 4K-Bit Standard 2-Wire Bus Interface Serial EEPROM |
| FM24C17U | 4K-Bit Standard 2-Wire Bus Interface Serial EEPROM |
| FM24C04UEM8 | I2C Serial EEPROM |
| FM24C04UEMT8 | I2C Serial EEPROM |
| FM24C04UEN | I2C Serial EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FM24C04A-STR | 功能描述:F-RAM 4K (512x8) 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24C04B | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:4Kb Serial 5V F-RAM Memory |
| FM24C04B_13 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4Kb Serial 5V F-RAM Memory |
| FM24C04B-G | 功能描述:F-RAM 4Kb Serial I2C 5V FRAM RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24C04B-GTR | 功能描述:F-RAM 4Kb Serial I2C 5V FRAM RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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