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參數(shù)資料
| 型號： | 61LV25616AL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K × 16高速異步的CMOS靜態(tài)RAM為3.3V電源 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 67K |
| 代理商： | 61LV25616AL |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/21/03
IS61LV25616AL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.0
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
Com.
Ind.
–2
–5
2
5
μA
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
DD
Outputs Disabled
Com.
Ind.
–2
–5
2
5
μA
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to V
DD
+0.5
V
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING RANGE
V
DD
10ns
Range
Ambient Temperature
12ns
Commercial
0°C to +70°C
3.3V +10%, -5%
3.3V + 10%
Industrial
–40°C to +85°C
3.3V +10%, -5%
3.3V + 10%
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