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參數(shù)資料
| 型號： | 61LV25616AL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K × 16高速異步的CMOS靜態(tài)RAM為3.3V電源 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 67K |
| 代理商： | 61LV25616AL |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/21/03
7
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IS61LV25616AL
ISSI
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CE
=
OE
= V
IL
,
UB
or
LB
= V
IL
)
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
UB_CEDR2.eps
t
HZB
ADDRESS
OE
CE
LB, UB
D
OUT
t
HZCE
t
BA
t
LZB
t
RC
t
PD
I
SB
I
CC
50%
V
DD
Supply
Current
50%
t
PU
READ CYCLE NO. 2
(1,3)
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE
,
UB
, or
LB
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transition.
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